Intel Corporation C2109-4S6002 | 搜芯易Sourcengine

Intel Corporation C2109-4S6002

生命周期状态
Discontinued
说明
DRAM, 8KX1, 250ns, MOS, CDIP16
类别
Semiconductors Memory ICs DRAMs OTHER DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
MOS
JESD-30 Code
R-XDIP-T16
Memory Width
1
Organization
8KX1
Package Code
DIP
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory Density
8192 bit
Memory IC Type
OTHER DRAM
Refresh Cycles
64
Terminal Pitch
2.54 mm
Access Time-Max
250 ns
Number of Words
8192 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
35 mA
Number of Terminals
16
Number of Words Code
8K
Qualification Status
Not Qualified
Package Body Material
CERAMIC
Output Characteristics
3-STATE
Package Equivalence Code
DIP16,.3
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel