ROHM Semiconductor BR25L040FVM-WTL | 搜芯易Sourcengine

ROHM Semiconductor BR25L040FVM-WTL

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
EEPROM Card, 512X8, Serial, CMOS, PDSO8
类别
Semiconductors Memory ICs EEPROMs EEPROM CARD

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Technology
CMOS
JESD-30 Code
R-PDSO-G8
Memory Width
8
Package Code
TSSOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e2
Memory IC Type
EEPROM CARD
Parallel/Serial
SERIAL
Serial Bus Type
SPI
Terminal Finish
TIN COPPER
Write Protection
HARDWARE/SOFTWARE
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
512X8
Number of Terminals
8
Terminal Pitch (mm)
0.635
Number of Words Code
512
Memory Density (bits)
4096
Package Body Material
PLASTIC/EPOXY
Data Retention Time-Min
40
Number of Words (words)
512
Programming Voltage (V)
2.7
Standby Current-Max (A)
2.0E-6
Supply Current-Max (mA)
3
Package Equivalence Code
TSSOP8,.16
Peak Reflow Temperature (Cel)
260
Endurance (Write/Erase Cycles)
1000000
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
10