ROHM Semiconductor BR24T256FV-WGE2 | 搜芯易Sourcengine

ROHM Semiconductor BR24T256FV-WGE2

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
EEPROM, 32KX8, Serial, CMOS, PDSO8
类别
Semiconductors Memory ICs EEPROMs EEPROM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Technology
CMOS
JESD-30 Code
R-PDSO-G8
Memory Width
8
Package Code
SOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
EEPROM
Operating Mode
SYNCHRONOUS
Parallel/Serial
SERIAL
Serial Bus Type
MICROWIRE
I2C Control Byte
1010DDDR
Write Protection
HARDWARE
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
32KX8
Number of Functions
1
Number of Terminals
8
Terminal Pitch (mm)
0.635
Number of Words Code
32K
Memory Density (bits)
262144
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
2.5
Data Retention Time-Min
40
Number of Words (words)
32768
Standby Current-Max (A)
2.0E-6
Supply Current-Max (mA)
2.5
Package Equivalence Code
SSOP8,.25
Clock Frequency-Max (MHz)
0.4
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Endurance (Write/Erase Cycles)
1000000
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Write Cycle Time-Max (tWC) (ms)
5
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED