ROHM Semiconductor BG2011SM-BTR | 搜芯易Sourcengine

ROHM Semiconductor BG2011SM-BTR

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
6 V
Transistor Element Material
GALLIUM ARSENIDE