Renesas Electronics Corp. BB304CDW-TL-E | 搜芯易Sourcengine

Renesas Electronics Corp. BB304CDW-TL-E

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF MOSFET N-CH 12V 0.025A 4-Pin(3+Tab) SOT-343 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
24 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.025 A
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.05 pF
DS Breakdown Voltage-Min
12 V
Transistor Element Material
SILICON