ASI Semiconductor, Inc. ASTD5060-51 | 搜芯易Sourcengine

ASI Semiconductor, Inc. ASTD5060-51

生命周期状态
Active
说明
Tunnel Diode, 18GHz Max, 0.11V V(F) @Ipeak, 0.6mA Ipeak, Silicon
类别
Semiconductors Diodes Microwave Special Purpose Diodes TUNNEL DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
TUNNEL DIODE
Technology
TUNNEL
JESD-30 Code
O-XEMW-N2
Configuration
SINGLE
Package Shape
ROUND
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
NO LEAD
DLA Qualification
Not Qualified
Terminal Position
END
Number of Elements
1
Number of Terminals
2
Package Body Material
UNSPECIFIED
Diode Element Material
SILICON
Forward Voltage-Max (V)
0.11
Power Dissipation-Max (W)
0.05
Peak Point Current-Max (mA)
0.6
Operating Frequency-Max (GHz)
18
Operating Temperature-Max (Cel)
110
Operating Temperature-Min (Cel)
-65
Diode Forward Resistance-Max (ohm)
7