- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 55A I(D), 25V, 0.0147ohm, 3-Element, N-Channel, Silicon, Trench Mosfet FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyTRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements3
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)50
- Drain Current-Max (ID) (A)55
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)28
- DS Breakdown Voltage-Min (V)25
- Feedback Cap-Max (Crss) (pF)280
- Turn-off Time-Max (toff) (ns)42
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)100
- Drain-source On Resistance-Max (ohm)0.0147
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