- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 6A I(D), 40V, 0.031ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Power Dissipation-Max (W)2
- Drain Current-Max (ID) (A)6
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)10
- DS Breakdown Voltage-Min (V)40
- Feedback Cap-Max (Crss) (pF)50
- Turn-off Time-Max (toff) (ns)25
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)2
- Avalanche Energy Rating (Eas) (mJ)22
- Pulsed Drain Current-Max (IDM) (A)20
- Drain-source On Resistance-Max (ohm)0.031
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