Renesas Electronics Corp. 8MP824S60S | 搜芯易Sourcengine

Renesas Electronics Corp. 8MP824S60S

生命周期状态
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说明
SRAM Module, 128KX8, 60ns, CMOS
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Memory Width
8
Surface Mount
NO
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Memory Organization
128KX8
Number of Terminals
30
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
60
Number of Words Code
128K
Memory Density (bits)
1048576
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
131072
Standby Current-Max (A)
0.06
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
200
Package Equivalence Code
SIP30,.2
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0