Renesas Electronics Corp. 89009-2N7120TX | 搜芯易Sourcengine

Renesas Electronics Corp. 89009-2N7120TX

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
Power Field-Effect Transistor, 9A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-204AA
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
9
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Drain-source On Resistance-Max (ohm)
0.04
Screening Level / Reference Standard
MIL-PRF-19500