Renesas Electronics Corp. 7MB4040S45P | 搜芯易Sourcengine

Renesas Electronics Corp. 7MB4040S45P

生命周期状态
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说明
SRAM Module, 256KX9, 45ns, CMOS, PDIP44
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
SEPARATE
Technology
CMOS
JESD-30 Code
R-PDIP-T44
Memory Width
9
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
256KX9
Number of Terminals
44
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
45
Number of Words Code
256K
Memory Density (bits)
2359296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
262144
Standby Current-Max (A)
0.27
Standby Voltage-Min (V)
4.5
Supply Current-Max (mA)
1440
Package Equivalence Code
DIP44,.6
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0