Renesas Electronics Corp. 7204L30JGB | 搜芯易Sourcengine

Renesas Electronics Corp. 7204L30JGB

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Bi-Directional FIFO, 4KX9, 30ns, Asynchronous, CMOS, PQCC32
类别
Semiconductors Memory ICs FIFOs BI-DIRECTIONAL FIFO

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.71
SB Code
8542.32.00.70

Technology
CMOS
Width (mm)
11.4554
Length (mm)
13.9954
JESD-30 Code
R-PQCC-J32
Memory Width
9
Package Code
QCCJ
Output Enable
NO
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e3
Memory IC Type
BI-DIRECTIONAL FIFO
Operating Mode
ASYNCHRONOUS
Cycle Time (ns)
40
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
QUAD
Memory Organization
4KX9
Number of Functions
1
Number of Terminals
32
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
30
Number of Words Code
4K
Memory Density (bits)
36864
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
3.556
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
4096
Standby Current-Max (A)
0.025
Supply Current-Max (mA)
150
Package Equivalence Code
LDCC32,.5X.6
Clock Frequency-Max (MHz)
25
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883 Class B
Time@Peak Reflow Temperature-Max (s)
30