Renesas Electronics Corp. 7204L20PDGB | 搜芯易Sourcengine

Renesas Electronics Corp. 7204L20PDGB

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Bi-Directional FIFO, 4KX9, 20ns, Asynchronous, CMOS, PDIP28
类别
Semiconductors Memory ICs FIFOs BI-DIRECTIONAL FIFO

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.71
SB Code
8542.32.00.70

Technology
CMOS
JESD-30 Code
R-PDIP-T28
Memory Width
9
Package Code
DIP
Output Enable
NO
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Memory IC Type
BI-DIRECTIONAL FIFO
Operating Mode
ASYNCHRONOUS
Cycle Time (ns)
30
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
DUAL
Memory Organization
4KX9
Number of Functions
1
Number of Terminals
28
Access Time-Max (ns)
20
Number of Words Code
4K
Memory Density (bits)
36864
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
4096
Standby Current-Max (A)
0.025
Supply Current-Max (mA)
150
Clock Frequency-Max (MHz)
33.3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
MIL-STD-883 Class B
Time@Peak Reflow Temperature-Max (s)
30