Renesas Electronics Corp. 71V65803Z133BQGI | 搜芯易Sourcengine

Renesas Electronics Corp. 71V65803Z133BQGI

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
ZBT SRAM, 512KX18, 4.2ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
Width (mm)
13
Length (mm)
15
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
TBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
512KX18
Number of Functions
1
Number of Terminals
165
Terminal Pitch (mm)
1
Access Time-Max (ns)
4.2
Number of Words Code
512K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
524288
Supply Current-Max (mA)
320
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30