Renesas Electronics Corp. 71V3559S75BQ | 搜芯易Sourcengine

Renesas Electronics Corp. 71V3559S75BQ

生命周期状态
EOL
说明
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O CABGA 15.00x13.00x1.20 mm 1.00mm Pitch
类别
Semiconductors Memory ICs

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
13.0000
Length (mm)
15.0000
JESD-30 Code
R-PBGA-B165
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
256KX18
Number of Terminals
165
Terminal Pitch (mm)
1.000
Access Time-Max (ns)
7.5000000000000000
Number of Words Code
256K
Memory Density (bits)
4718592.0000000000000000
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.46500
Supply Voltage-Min (V)
3.13500
Supply Voltage-Nom (V)
3.3
Number of Words (words)
262144.0000000000000000
Standby Current-Max (A)
0.040000000000000
Standby Voltage-Min (V)
3.140000
Supply Current-Max (mA)
275.000000000000000
Package Equivalence Code
BGA165,11X15,40
Clock Frequency-Max (MHz)
100.00000
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70.0
Operating Temperature-Min (Cel)
0.0
Time@Peak Reflow Temperature-Max (s)
30
Width
13
Length
15