Integrated Device Technology, Inc. 71B229S16Y | 搜芯易Sourcengine

Integrated Device Technology, Inc. 71B229S16Y

生命周期状态
Discontinued
说明
Cache SRAM, 32KX9, 16ns, PDSO32
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A991.b.2.b
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
JESD-30 Code
R-PDSO-J32
Memory Width
9
Package Code
SOJ
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
J BEND
J-STD-609 Code
e0
Memory IC Type
CACHE SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Memory Organization
32KX9
Number of Terminals
32
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
16
Number of Words Code
32K
Memory Density (bits)
294912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
32768
Supply Current-Max (mA)
230
Package Equivalence Code
SOJ32,.34
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
30