7164L20YG
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明5.0V 8K x 8 Asynchronous Static RAM SOJ 17.90x7.60x2.67 mm 1.27mm Pitch
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Width7.6
- Length17.9
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-J28
- Memory Width8
- Organization8KX8
- Package CodeSOJ
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE
- Surface MountYES
- Terminal FormJ BEND
- Memory Density65536
- Memory IC TypeSTANDARD SRAM
- Operating ModeASYNCHRONOUS
- Terminal Pitch1.27
- Access Time-Max19
- Number of Words8192
- Parallel/SerialPARALLEL
- Terminal FinishMATTE TIN
- Seated Height-Max3.556
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max150
- Number of Functions1
- Number of Terminals28
- Standby Current-Max.00006
- Standby Voltage-Min2
- Number of Words Code8K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeSOJ28,.34
- Operating Temperature-Max70
- Operating Temperature-Min0
- Supply Voltage-Max (Vsup)5.5
- Supply Voltage-Min (Vsup)4.5
- Supply Voltage-Nom (Vsup)5
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
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7164L20YG