Renesas Electronics Corp. 70V631S12BCGI | 搜芯易Sourcengine

Renesas Electronics Corp. 70V631S12BCGI

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Multi-Port SRAM, 256KX18, 12ns, CMOS, PBGA256
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
S-PBGA-B256
Memory Width
18
Package Code
BGA
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
256KX18
Number of Functions
1
Number of Terminals
256
Access Time-Max (ns)
12
Number of Words Code
256K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
3.45
Supply Voltage-Min (V)
3.15
Supply Voltage-Nom (V)
3.3
Number of Words (words)
262144
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30