Renesas Electronics Corp. 70V3379S5BCGI8 | 搜芯易Sourcengine

Renesas Electronics Corp. 70V3379S5BCGI8

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Application Specific SRAM, 32KX18, 5ns, CMOS, PBGA256
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.b
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B256
Memory Width
18
Package Code
BGA
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
SYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
32KX18
Number of Functions
1
Number of Terminals
256
Terminal Pitch (mm)
1
Access Time-Max (ns)
5
Number of Words Code
32K
Memory Density (bits)
589824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
3.45
Supply Voltage-Min (V)
3.15
Supply Voltage-Nom (V)
3.3
Number of Words (words)
32768
Standby Current-Max (A)
0.03
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
415
Package Equivalence Code
BGA256,16X16,40
Clock Frequency-Max (MHz)
100
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30