Renesas Electronics Corp. 70P246L55BYGI | 搜芯易Sourcengine

Renesas Electronics Corp. 70P246L55BYGI

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Multi-Port SRAM, 4KX16, 55ns, CMOS, PBGA100
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
S-PBGA-B100
Memory Width
16
Package Code
BGA
Package Shape
SQUARE
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
4KX16
Number of Functions
1
Number of Terminals
100
Access Time-Max (ns)
55
Number of Words Code
4K
Memory Density (bits)
65536
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
4096
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30