Renesas Electronics Corp. 7052L35PFB | 搜芯易Sourcengine

Renesas Electronics Corp. 7052L35PFB

生命周期状态
Discontinued
说明
Application Specific SRAM, 2KX8, 35ns, CMOS, PQFP120
类别
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PQFP-G120
Memory Width
8
Package Code
QFP
Package Shape
SQUARE
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
4
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
MILITARY
Terminal Position
QUAD
Memory Organization
2KX8
Number of Terminals
120
Terminal Pitch (mm)
0.4
Access Time-Max (ns)
35
Number of Words Code
2K
Memory Density (bits)
16384
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
2048
Standby Current-Max (A)
0.0018
Standby Voltage-Min (V)
2
Supply Current-Max (mA)
300
Package Equivalence Code
QFP120,.63SQ,16
Moisture Sensitivity Level
4
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Screening Level / Reference Standard
38535Q/M;38534H;883B
Time@Peak Reflow Temperature-Max (s)
30