Renesas Electronics Corp. 5962F0721806VXC | 搜芯易Sourcengine

Renesas Electronics Corp. 5962F0721806VXC

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Bipolar Transistor, 5-Element, Ultra High Frequency Band, Silicon, PNP
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFP-F16
Configuration
SEPARATE, 5 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e4
VCEsat-Max (V)
0.5
Terminal Finish
Gold (Au)
DLA Qualification
Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
5
Number of Terminals
16
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
PNP
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
0.0113
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
8
Power Dissipation Ambient-Max (W)
1.25
Transition Frequency-Nom (fT) (MHz)
5500
Screening Level / Reference Standard
MIL-38535; RH - 300K Rad(Si)
Time@Peak Reflow Temperature-Max (s)
30