Renesas Electronics Corp. 3SK191NI-TR | 搜芯易Sourcengine

Renesas Electronics Corp. 3SK191NI-TR

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.08
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
12