Renesas Electronics Corp. 2SK852-T2-A | 搜芯易Sourcengine

Renesas Electronics Corp. 2SK852-T2-A

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Switching N-Channel Power Mosfet
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
TIN BISMUTH
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.02 A
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
2.6 pF
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
0.15 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
0.15 W
Width
2
Length
1.25