2SK818
Panasonic Corporation
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 5A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min800 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)2.5 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max3 ohm
- Pulsed Drain Current-Max (IDM)10 A
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2SK818