Renesas Electronics Corp. 2SK4092-A | 搜芯易Sourcengine

Renesas Electronics Corp. 2SK4092-A

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Switching N-Channel Power Mosfet
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN BISMUTH
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
21 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
200 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
29.4 mJ
Drain-source On Resistance-Max
0.4 ohm
Pulsed Drain Current-Max (IDM)
60 A
Width
19.5
Length
15.7