Renesas Electronics Corp. 2SK3812-ZP-E1-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. 2SK3812-ZP-E1-AZ

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Nch Power MOSFET 60V 110A 2.8mohm TO-263 / D2PAK
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
213
Drain Current-Max (ID) (A)
110
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
1000
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1.5
Avalanche Energy Rating (Eas) (mJ)
397
Pulsed Drain Current-Max (IDM) (A)
440
Drain-source On Resistance-Max (ohm)
0.0037
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9.15
Length
10