Renesas Electronics Corp. 2SK3433-Z-AZ | 搜芯易Sourcengine

Renesas Electronics Corp. 2SK3433-Z-AZ

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Nch Single Power Mosfet 60V 40A 26Mohm Mp-25Z/To-220Smd
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
40 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
47 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
44 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.041 ohm
Pulsed Drain Current-Max (IDM)
80 A
Time@Peak Reflow Temperature-Max (s)
10
Width
8.5
Length
10