Renesas Electronics Corp. 2SK3174A | 搜芯易Sourcengine

Renesas Electronics Corp. 2SK3174A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH EFFICIENCY
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Dissipation-Max (W)
252
Drain Current-Max (ID) (A)
16
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
4
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Pulsed Drain Current-Max (IDM) (A)
32
Time@Peak Reflow Temperature-Max (s)
20