Renesas Electronics Corp. 2SK2596 | 搜芯易Sourcengine

Renesas Electronics Corp. 2SK2596

生命周期状态
NRFND
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH EFFICIENCY
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
0.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
17
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
1