Renesas Electronics Corp. 2SK1161-E | 搜芯易Sourcengine

Renesas Electronics Corp. 2SK1161-E

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Silicon N Channel MOSFET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e2
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN COPPER
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
10 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
450 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
100 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.8 ohm
Pulsed Drain Current-Max (IDM)
30 A