Renesas Electronics Corp. 2SJ76 | 搜芯易Sourcengine

Renesas Electronics Corp. 2SJ76

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 0.5A I(D), 140V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
0.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
140 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.7 W
Transistor Element Material
SILICON