Renesas Electronics Corp. 2SJ550STL-E | 搜芯易Sourcengine

Renesas Electronics Corp. 2SJ550STL-E

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Pch Single Power Mosfet -60V -15A 95Mohm LDPAK(S)-(1)/To-263
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e6
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN BISMUTH
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
50
Drain Current-Max (ID) (A)
15
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Peak Reflow Temperature (Cel)
245
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
60
Drain-source On Resistance-Max (ohm)
0.155
Time@Peak Reflow Temperature-Max (s)
20