Renesas Electronics Corp. 2SJ443 | 搜芯易Sourcengine

Renesas Electronics Corp. 2SJ443

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 10A I(D), 0.25ohm, 1-Element, P-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
10 A
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
25 W
Drain-source On Resistance-Max
0.25 ohm