2SJ196-T
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明Small Signal Field-Effect Transistor, 1A I(D), 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-PBCY-T3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)0.75
- Drain Current-Max (ID) (A)1
- Transistor Element MaterialSILICON
- Operating Temperature-Max (Cel)150
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2SJ196-T