2SJ181(L)-(1)
Renesas Electronics Corp.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 0.5A I(D), 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)20
- Drain Current-Max (ID) (A)0.5
- Transistor Element MaterialSILICON
- Operating Temperature-Max (Cel)150
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2SJ181(L)-(1)