Renesas Electronics Corp. 2SH11 | 搜芯易Sourcengine

Renesas Electronics Corp. 2SH11

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Number of Elements
1
Emitter Current-Max
50 mA
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-off Time-Nom (toff)
900 ns
Static Inter-base Res-Min
4.5 kohm
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
0.45 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Intrinsic Stand-off Ratio-Max
0.75
Intrinsic Stand-off Ratio-Min
0.58