Renesas Electronics Corp. 2SC5820WU-TL-E | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC5820WU-TL-E

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Small Signal Bip-TRSs for High Frequency Amplifier
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
70
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.035 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.1 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
4 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
20000 MHz
Collector-base Capacitance-Max
0.6 pF
Time@Peak Reflow Temperature-Max (s)
20