Renesas Electronics Corp. 2SC5606-A | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC5606-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF TRANS NPN 3.3V 21GHZ SOT523
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
DC Current Gain-Min (hFE)
60
Power Dissipation-Max (W)
0.115
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.035
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
3.3
Collector-base Capacitance-Max (pF)
0.3
Transition Frequency-Nom (fT) (MHz)
21000
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED