Renesas Electronics Corp. 2SC5509-T2 | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC5509-T2

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.19 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
3.3 V
Transition Frequency-Nom (fT)
15000 MHz
Collector-base Capacitance-Max
0.75 pF