Renesas Electronics Corp. 2SC5186-T1 | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC5186-T1

生命周期状态
Contact Mfr
说明
Trans RF BJT NPN 3V 0.03A 3-Pin Ultra Super Mini-Mold T/R
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
DC Current Gain-Min (hFE)
70
Power Dissipation-Max (W)
0.09
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.03
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
3
Power Dissipation Ambient-Max (W)
0.09
Collector-base Capacitance-Max (pF)
0.8
Transition Frequency-Nom (fT) (MHz)
11000