Renesas Electronics Corp. 2SC3867DI-UR | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC3867DI-UR

生命周期状态
Contact Mfr
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
SWITCHING
Collector Current-Max (IC)
0.05 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
11 V
Transition Frequency-Nom (fT)
3800 MHz
Collector-base Capacitance-Max
1.5 pF