Renesas Electronics Corp. 2SC3357-T1RE | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC3357-T1RE

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON
Collector-emitter Voltage-Max (V)
12
Collector-base Capacitance-Max (pF)
1
Transition Frequency-Nom (fT) (MHz)
6500