Renesas Electronics Corp. 2SC3286-M | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC3286-M

生命周期状态
Discontinued
说明
RF Power Bipolar Transistor, 2-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
COMMON EMITTER, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
Case Connection
EMITTER
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
0.28
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
24
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
32
Collector-base Capacitance-Max (pF)
240