Renesas Electronics Corp. 2SC2786-A | 搜芯易Sourcengine

Renesas Electronics Corp. 2SC2786-A

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
40
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.02 A
Power Dissipation-Max (Abs)
0.25 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
20 V
Peak Reflow Temperature (Cel)
260
Transition Frequency-Nom (fT)
600 MHz
Collector-base Capacitance-Max
1.3 pF
Time@Peak Reflow Temperature-Max (s)
10