Panasonic Corporation 2SB1180A | 搜芯易Sourcengine

Panasonic Corporation 2SB1180A

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
500
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
1.3 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
80 V
Transition Frequency-Nom (fT)
20 MHz