ROHM Semiconductor 2SB1132T100PR | 搜芯易Sourcengine

ROHM Semiconductor 2SB1132T100PR

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
说明
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PSSO-F3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e2
VCEsat-Max (V)
0.5
Case Connection
COLLECTOR
Terminal Finish
Tin/Copper (Sn/Cu)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
82
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
32
Power Dissipation Ambient-Max (W)
2
Collector-base Capacitance-Max (pF)
30
Transition Frequency-Nom (fT) (MHz)
150
Time@Peak Reflow Temperature-Max (s)
10