Renesas Electronics Corp. 2SB1109C | 搜芯易Sourcengine

Renesas Electronics Corp. 2SB1109C

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Bipolar Transistor, 0.1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
100
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
1.25 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
160 V
Transition Frequency-Nom (fT)
140 MHz