ROHM Semiconductor 2SAR586DGTL | 搜芯易Sourcengine

ROHM Semiconductor 2SAR586DGTL

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
120
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
5
Collector-emitter Voltage-Max (V)
80
Transition Frequency-Nom (fT) (MHz)
200
Time@Peak Reflow Temperature-Max (s)
30