Toshiba Corporation 2SA966-Y | 搜芯易Sourcengine

Toshiba Corporation 2SA966-Y

生命周期状态
Discontinued
说明
Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
类别
Semiconductors Transistors Other Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
160
Power Dissipation-Max (W)
0.9
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
1.5
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
30
Collector-base Capacitance-Max (pF)
30
Transition Frequency-Nom (fT) (MHz)
120
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED